|
2007 |
10 |
Taiwan’s
invention patent on “A New technology to fabricate the
Self-align Trench Power MOSFETs” acquired (Invention license No.
I 287840) |
|
2005 |
10 |
The U.S.A
invention patent on“Lower the on-resistance in protection
circuit of rechargeable battery by using flip-chip technology”
acquired (Invention license No.6,917,117) |
|
2005 |
10 |
Mainland China
invention patent on “The fabrication method for Power MOSFETs ”
acquired (Invention license No.ZL01144661.7) |
|
2005 |
5 |
Taiwan’s new
type patent on “ An improved wire package method to reduce the
On-Resistance of Power MOSFET ” acquired (New type license No.
M262837) |
|
2005 |
4 |
Mainland China
invention patent on “Wireless bonded semi-conductor device and
method for packaging the same” acquired (Invention license
No.ZL02102821.4) |
|
2004 |
12 |
Mainland China
invention patent on “Lead-Frame ” acquired (Invention license
No.ZL01110591.7) |
|
2004 |
5 |
Taiwan’s
invention patent on “Using the Guard Ring structure to integrate
POWER MOSFET and system in one chip” acquired (Invention license
No. 196136) |
|
2004 |
5 |
Mainland China
invention patent on “The design of POWER MOSFET by using Flip
chip in protect circuit for battery ” acquired (Invention
license No.ZL01110591.7) |
|
2004 |
4 |
Taiwan’s
invention patent on “For high avalanche energy power device
design and fabrication ” acquired (Invention license No. 194175) |
|
2003 |
12 |
Taiwan’s
invention patent on “ A novel way to improve the switching
performance by change the poly gate structure” acquired
(Invention license No. 182953) |
|
2003 |
9 |
Taiwan’s
invention patent on “Wireless bonded semi-conductor device and
method for packaging the same” acquired (Invention license No.
176589) |
|
2003 |
7 |
Taiwan’s
invention patent on “Integrated packaging structure for
single-phased descending DC converter ” acquired (New type
license No. 199864) |
2003 |
5 |
Taiwan’s invention patent on “Lower
the on-resistance in protection circuit of rechargeable battery
by using flip-chip technology” acquired (Invention license
No. 168017) |
2003 |
4 |
Taiwan’s invention patent on “Package
and appliance for semiconductor power device ” acquired
(Invention license No. 163944) |
2003 |
3 |
Taiwan’s invention patent on “Wireless
bonded semi-conductor device and method for packaging the same”
acquired
(Invention license No. 165175) |
2002 |
9
|
Taiwan’s invention patent on “Appliance
and fabrication for using gradual doping on well areas to reduce
electric leakage of Power MOSFET and increase Break-down voltage”
acquired
(Invention license No. 154006) |
2002 |
9
|
Taiwan’s invention patent on “Appliance
and fabrication for Trench-typed Power MOSFET with reducing
the electric resistance of the epitaxy layer” Acquired
(Invention license No. 152521) |
2002 |
8
|
Taiwan’s invention patent on “Power
mosfet device with reduced snap-back and being capable of increasing
avalanche-breakdown current endurance, and method of manufacturing
the same” acquired
(Invention license No. 151542) |
2002 |
7
|
Taiwan’s invention patent on “Method
of control switching speed of insulated gate bipolar transistor
(IGBT) device, its structure and method of fabrication”
acquired
(Invention license No. 151899) |
2002 |
6 |
Taiwan’s invention patent on “Appliance
and fabrication for low Rdson Power MOSFET” acquired
(Invention license No. 151091) |
2002 |
6 |
Taiwan’s invention patent on “Appliance
and fabrication for Trench-typed low Rdson Power MOSFET with
planar technology in the same component space” acquired
(Invention license No. 151089) |
2002 |
6 |
Taiwan’s invention patent on “Appliance
and fabrication for planar Power MOSFET with super low Rdson”
acquired
(Invention license No. 151088) |
2002 |
5 |
Taiwan’s new type patent on “Power
MOSFET appliance with low contact Rdson”
(New type license No. 185499) |
2002 |
4 |
Taiwan’s invention patent on “Appliance
and fabrication of decreasing Rdson and increasing avalanche
current for Power MOSFET” acquired
(Invention license No. 147333) |
2002 |
3 |
Taiwan’s invention patent on “Method
and appliance of enhancing Power MOSFET’s switching speed
by dose implantation” acquired
(Invention license No. 145832) |
2002 |
3 |
Taiwan’s invention patent on “Development
of construction and fabrication for Trenched Power MOSFET”
acquired
(Invention license No. 144201) |
2001 |
4 |
Taiwan’s new type patent on “Leadframe
Design for Power MOSFET in plastic package” acquired
(New type license No. 153576) |
